Airways Myo Therapy Group

Nanosheet Transistors: 2nm nodes use Gate-All-Around (GAA) nanosheets, which require etching around all four sides of a channel. This has led to the dominance of Isotropic Selective Etching

3D NAND Stacking: With memory chips now exceeding 300 layers in 2026, Deep Reactive Ion Etching (DRIE) is essential. These tools must etch high-aspect-ratio holes (greater than 100:1) through thick stacks of alternating materials with perfect verticality.

Cryogenic Etching: A major 2026 innovation where wafers are cooled to extremely low temperatures (e.g., using HF-containing plasmas at $-100°C$) to increase etch rates and improve profile control for high-aspect-ratio features.